Перегляд за автором "Svechnikov, G.S."

Сортувати за: Порядок: Результатів:

  • 3C-6H transformation in heated cubic silicon carbide 3C-SiC 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Results of the research on the photoluminescence study of the 3C-6H-SiC phase transformation are presented. 3C-SiC crystals with in grown 3C-6H transformation and pure perfect 3C-SiC crystals grown by the Tairov-Tsvetkov ...
  • 8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    In this paper the results of photoluminescence researches devoted to phase transitions in 6H-3C-SiC have been presented. High pure 6H-SiC crystals grown by Tairov’s method with and without polytype joint before and after ...
  • An intrinsic physical content of “single photon power” − (hν∙Δν) 
    Salkov, E.A.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Considered in this paper is the possibility to use information properties of photon noise inherent to thermal radiation. Using the calculations of threshold limitations for detecting the fluctuations of thermal radiation ...
  • A priori probabilistic model for the reliability of an "organised structure" 
    Sal'kov, E.A.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The basic possibility to create information model of the certain product (a semiconductor electronic device, or its element: p-n junction, quantum well, etc.) has been considered. Each product may be represented uniquely ...
  • Boron, aluminum, nitrogen, oxygen impurities in silicon carbide 
    Vlaskina, S.I.; Vlaskin, V.I.; Podlasov, S.A.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Diffusion of boron, aluminum, and oxygen was conducted at temperatures 1600 – 1700°C. Very pure original n-SiC crystal (6H-SiC) specially grown by the Lely method annealed in oxygen during 2 h at 1700 °C, in argon during ...
  • Composite film structures containg ZnS, CdS nanoparticles prepared by MOC pyrolysis at low temperatures 
    Svechnikov, G.S.; Zavyalova, L.V.; Roshchina, N.N.; Prokopenko, I.V.; Berezhinsky, L.I.; Khomchenko, V.S.; Litvin, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    New composite structures containing ZnS, CdS nanoparticles were prepared with bright light-blue colour of a luminescence. The structures were formed by spraying organic solution of zinc or cadmium ditiocarbamate onto ...
  • Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations 
    Morozovska, A.N.; Svechnikov, G.S.; Shishkin, E.I.; Shur, V.Y. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In the paper we adopt the analytical Landau-Ginzburg-Devonshire theory to describe the ferroelectric domain structure formation using Scanning Probe Microscopy. We calculate the effective local piezoresponse of the domain ...
  • Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals 
    Machulin, V.F.; Motsnyi, F.V.; Peresh, E.Yu.; Smolanka, O.M.; Svechnikov, G.S. (Физика низких температур, 2004)
    The exciton reflection spectra of Cs₃Bi₂I₉ layered crystals is investigated in the temperature region 4.2–300 K with light polarization E ⊥ c. It is estimated that the energy gap Eg equals 2.857 eV (T = 4.2 K) and the ...
  • External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Influence of plastic deformation and high-temperature annealing (T = 2100 °C, t = 1 h) on SiC crystals with grown polytypic junctions demonstrating SF and DL spectra have been presented. SF-i and DL-i type luminescence are ...
  • Flexible electroluminescent panels 
    Vlaskin, V.I.; Vlaskina, S.I.; Koval, O.Yu.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Recently developed ac ZnS-powder electroluminescence (EL) devices have flexibility (thickness is about 60 µm) and can be multisegment, multicolor, as well as rolled and bent. All colors (white, blue, blue-green, green, ...
  • Investigation of luminescent properties inherent to SrTiO₃:Pr³⁺ luminophor with Al impurity 
    Marchylo, O.M.; Zavyalova, L.V.; Nakanishi, Y.; Kominami, H.; Belyaev, A.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The red-emitting SrTiO₃:Pr³⁺,Al luminophors that can be used for the white light emitting diodes (LEDs) were prepared using the sol-gel method. The starting materials were SrCl₂, Ti (O – i – C₃H₇)₄, Al(NO₃)₃·9H₂O and ...
  • Nanocrystalline silicon carbide films for solar cells 
    Vlaskina, S.I.; Mishinova, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Nanocrystalline silicon carbide (nc-SiC) films as protective coating and as solar cell material for a harsh environment, high temperatures, light intensities and radiation, were investigated. p- and n-types 100-mm silicon ...
  • Nanostructures in lightly doped silicon carbide crystals with polytypic defects 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, L.V.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    In this work, photoluminescence spectra of lightly doped SiC crystals with ingrown original defects are reported. Undoped SiC single crystals with the impurity concentration of ND – NA ~ (2…8)*10¹⁶ cm⁻³, NA ~ (2…8)*10¹⁷ ...
  • New method for estimating the refractive index of optical materials in spectrally selective elements 
    Manko, A.A.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    A numerical simulation of the scattering indicatrix in optical spectral-selective cylindrical form elements has been performed. As it follows from the results of the calculations, the shape of the scattering indicatrix of ...
  • On thermal emission of small-sized radiator 
    Salkov, E.A.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Principle feasibility has been considered for a distant identification of a small-sized thermal radiator by means of detecting its thermal radiation. A single small-size radiator is phenomenologically treated within the ...
  • Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects 
    Vlaskina, S.I.; Mishinova, G.N.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Phase transformations of SiC crystals and thin films with in-grown original defects have been studied. The analysis of absorption, excitation and low-temperature photoluminescence spectra testifies to formation of new ...
  • Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics ...
  • Polar properties and local piezoelectric response of ferroelectric nanotubes 
    Morozovska, A.N.; Svechnikov, G.S.; Shiskin, E.I.; Shur, V.Y. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    We consider the polar properties of the ferroelectric nanotubes within the framework of Landau-Ginzburg-Devonshire phenomenology. The approximate analytical expression for the paraelectric-ferroelectric transition ...
  • Silicon carbide defects and luminescence centers in current heated 6H-SiC 
    Lee, S.W.; Vlaskina, S.I.; Vlaskin, V.I.; Zaharchenko, I.V.; Gubanov, V.A.; Mishinova, G.N.; Svechnikov, G.S.; Rodionov, V.E.; Podlasov, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    At room temperature yellow photoluminescence with a broad peak of 2.13 eV is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is regarded as recombination involving both the boron-related deep ...
  • Silicon carbide phase transition in as-grown 3C-6H polytypes junction 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Svechnikov, G.S.; Rodionov, V.E.; Lee, S.W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K and 77 K) photoluminescence. Phase transformation ...